
Silicon substrates designed for use in organic electronics labs as FET substrates, and other applications including X-ray studies, surface microscopy analysis and elipsometry measurements. Sold on 200 mm wafer mounts, pre-oxidised and pre-diced to our standardised substrate size of 15 mm x 20 mm with no photoresist coating, these substrates fit in our substrate rack and makes batch cleaning and processing much faster and simpler.
Product code | Oxide (nm) | Dicing | Resistivity (Ω cm) | Usage |
---|---|---|---|---|
S146 | 300 | Diced | 0.0005 to 0.001 | OFETs with a robust electro-mechanical gate insulator (suitable for use with gold electrode evaporations) |
S147 | 400 | Diced | X-ray measurements, microscopy and ellipsometry | |
S148 | 90 | Diced | Optical microscopy of 2D materials |


Wafer Specifications
Wafer diameter | 200 mm (8") |
Oxide thickness tolerance | +/- 5% (both sides) |
Oxide growth | Thermally grown (dry) on both sides |
Wafer type / dopant | P / Boron |
Wafer thickness | 725 +/- 25 µm |
Wafer growth | Czochralski (CZ) |
Orientation | <1 0 0> |
Front surface | Polished |
Back surface | Etched |
Dicing Specifications
Substrate size | 20 mm x 15 mm |
Substrates per wafer | Approx. 75 complete substrates (plus partial edge pieces) |
Wafer protection | None |
Cleaning routine
As with all organic electronic devices, getting a clean substrate is essential for high performance. Our pre-diced substrates make batch cleaning easier by use of a substrate rack. These wafers can be cleaned with the following routine:
- 5 mins sonication in 1% (v/v) Hellmanex solution
- 2x dump rinse in hot water
- 5 mins sonication in IPA
- 2x dump rinse in deionised water
- N2 blow dry
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
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