
Low price, high purity 2D hexagonal boron nitride (h-BN) crystals and films
With a honeycomb structure based on sp2 covalent bonds similar to graphene, hexagonal boron nitride is also known as “white graphene”. h-BN monolayers have a layered structure (again, very similar to graphene).
The hexagonal crystal structure of h-BN is one of the three crystalline forms of boron nitride (BN). BN crystallises in hexagonal form at room temperature and normal pressure. It is the most stable phase of the three crystalline forms. At higher temperature and pressure, h-BN transform into a wurtzite structure (P63mc).
h-BN is normally considered an insulator, and is used as a sub-layer material for any other 2D material in electronic devices. However, it has exotic opto-electronic properties (e.g. wide bandgap and low dielectric constant) along with mechanical robustness, high thermal conductivity and chemical inertness. It was later confirmed to have an indirect bandgap (at 5.955 eV), and thus is also considered a semiconductor.
2D h-BN has no absorption in the visible range, but has absorption in the ultraviolet region with good photoluminescence.
Hexagonal boron nitride (h-BN) monolayer film has a similar lattice structure to graphene, with a lattice mismatch of only about 1.8%. h-BN and graphene are different in terms of their electrical conductivity. With a bandgap of 6.08 eV, h-BN has an insulating nature, whereas graphene is considered a semi-metal.
h-BN is widely used as a dielectric substrate in electronic and optical devices for graphene and other 2D-layered semiconductors (e.g. transition metal dichalcogenides TMDs).
Hexagonal boron nitride (h-BN) few-layer film, often referred to as h-BN nanosheets (h-BNNS), has an ultra-flat surface without dangling bonds. Due to its oxidation resistance even at high temperatures (up to 1000 oC) and chemical resistance to both acids and bases, it is believed to be a better substrate than silicon.
We supply low price hexagonal boron nitride (h-BN) in several different forms for a range of applications.
Hexagonal Boron Nitride Crystals

Can be used for preparation of Hexagonal Boron Nitride nanoplates nano-platelets and ultrathinthin films
Available in Pack of 5 or 10 crystals
≥ 99.99% purity
From £395.00
Hexagonal Boron Nitride Films

Can be used as substrate, dielectrics and passivation layers or interlayer to other 2D materials,
Monolayer and Few-Layer h-BN Films available on SiO2/Si or PET sunstrate*
≥ 99% purity
From £189.00
*Custom made size and substrates are also available
- Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
- Sapphire (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
- Silicon (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
- Quartz (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
- Copper (5 cm × 10 cm or custom-made sizes)
Hexagonal boron nitride (h-BN) crystals are most commonly used as sources from which single or few-layer sheets can be obtained via either mechanical or liquid exfoliation.

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h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.
Key Product Data
- High purity hexagonal boron nitride crystals and films
- Sold according to package or size and substrate respectively
- Low price with free worldwide shipping on qualifying orders
Synthesis and Usage
High quality monolayer and few-layer h-BN films were first grown directly on copper foil via the chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates via the wet chemical transfer process.
h-BN films are ready to use in various research purposes, such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. h-BN monolayer film can also be transferred to other substrates.
Structure and Properties of Hexagonal Boron Nitride
After exfoliation of Hexagonal Boron Nitride crystal or powder, Hexagonal Boron Nitride typically has the following properties:
- Known as “white graphene”
- BN crystallises in hexagonal form (P63mc)
- Normally considered an insulator
- With an indirect bandgap (at 5.955 eV), and thus is also considered a semiconductor
Applications of Hexagonal Boron Nitride
Thanks to its direct wide bandgap and ultraviolet luminescence property, exfoliated h-BN nano-sheets are a promising candidate for applications in ultraviolet lasers, photon emission, and DUV detectors. 2D h-BN also finds applications in FETs, quantum tunnelling transistors, thermoelectric devices, LEDs and solar cells.
Technical Data
CAS number | 10043-11-5 |
Full name | Hexagonal boron nitride |
Chemical formula | BN |
Molecular weight | 24.82 g/mol |
Bandgap | Indirect bandgap at 5.955 eV |
Preparation | Synthetic - Chemical Vapour Transport (CVT) |
Structure | Hexagonal (2H) |
Electronic properties | 2D Materials - insulator/semiconductor |
Melting point | 2,973 °C (sublimates) |
Colour | Colourless |
Synonyms | White graphene, hexagonal BN, h-BN |
Classification / Family | 2D materials, Organic electronics, Materials science |
Product Details
Form | Purity |
Hexagonal Boron Nitride Crystals | ≥ 99.99% |
Hexagonal Boron Nitride Films | ≥ 99% |
Monolayer Film
Substrate | SiO2/Si | PET |
Product code | M2161F11 | M2162F11 |
Size | 1 cm × 1 cm* | 1 cm × 1 cm* |
Growth Method | CVD synthesis | CVD synthesis |
Appearance | Transparent | Transparent |
Purity | > 99% | > 99% |
Transparency | > 97% | > 97% |
Coverage | > 95% | > 95% |
Number of Layers | 1 | 1 |
Sheet Resistance | n.a. | n.a. |
Transfer method | Wet chemical transfer | Wet chemical transfer |
Substrate Thickness | 300 nm | 250 µm |
MSDS |
Few-Layer Film
Substrate | SiO2/Si | PET |
Product code | M2163F11 | M2164F11 |
Size | 1 cm × 1 cm* | 1 cm × 1 cm* |
Growth Method | CVD synthesis | CVD synthesis |
Appearance | Transparent | Transparent |
Purity | > 99% | > 99% |
Transparency | > 97% | > 97% |
Coverage | > 95% | > 95% |
Number of Layers | 2-6 | 2-6 |
Sheet Resistance | n.a. | n.a. |
Transfer method | Wet chemical transfer | Wet chemical transfer |
Substrate Thickness | 300 nm | 250 µm |
MSDS |
MSDS Documents
Hexagonal Boron Nitride Crystals
Hexagonal Boron Nitride Monolayer Film on SiO2/Si
Hexagonal Boron Nitride Monolayer Film on PET
Hexagonal Boron Nitride Few-Layer Film on SiO2/Si
Hexagonal Boron Nitride Few-Layer Film on PET
Structure of Hexagonal Boron Nitride
With a honeycomb structure based on sp2 covalent bonds similar to graphene, hexagonal boron nitride is also known as “white graphene”. h-BN monolayers have a layered structure (again, very similar to graphene).
The hexagonal crystal structure of h-BN is one of the three crystalline forms of boron nitride (BN). BN crystallises in hexagonal form at room temperature and normal pressure. It is the most stable phase of the three crystalline forms. At higher temperature and pressure, h-BN transform into a wurtzite structure (P63mc).

Applications of Hexagonal Boron Nitride
Few-layer h-BN can be achieved either by physical, thermal, or liquid phase exfoliation, Like graphite, its layer-by-layer structure is held together by van der Waals forces.
The optical band gap of monolayer h-BN is found to be 6.07 eV, while few-layer h-BN has bandgaps ranging from 5.56 to 5.92 eV, depending on the number of layers. Thanks to its direct wide bandgap and ultraviolet luminescence property, exfoliated h-BN nano-sheets are a promising candidate for applications in ultraviolet lasers, photon emission, and DUV detectors. 2D h-BN also finds applications in FETs, quantum tunnelling transistors, thermoelectric devices, LEDs and solar cells.
Due to its special chemical properties and electronic structure, h-BN often serves as an atomic flat insulating substrate or a tunneling dielectric barrier in graphene and other 2D electronics. Like graphene, h-BN exhibits excellent mechanical flexibility, chemical and temperature stability, and high thermal conductivity. h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.
Pricing Table (All)
Form | Package/Substrates* | Product Code | Price |
Crystals | Pack of 5 Crystals | M2133A1 | £395.00 |
Crystals | Pack of 10 Crystals | M2133C1 | £675.00 |
Monolayer Films | SiO2/Si - 2 Each | M2161F11 | £189.00 |
Monolayer Films | SiO2/Si - 4 Each | M2161F11 | £323.00 |
Monolayer Films | PET - 2 Each | M2162F11 | £189.00 |
Monolayer Films | PET - 4 Each | M2162F11 | £323.00 |
Few-Layer Films | SiO2/Si - 2 Each | M2163F11 | £189.00 |
Few-Layer Films | SiO2/Si - 4 Each | M2163F11 | £323.00 |
Few-Layer Films | PET - 2 Each | M2164F11 | £189.00 |
Few-Layer Films | PET - 4 Each | M2164F11 | £323.00 |
*typical representative size, areas/dimensions may vary
**item with a lead time of 4-6 weeks, please contact for more information
Shipping is free for qualifying orders.
Literature and Reviews
- Hexagonal boron nitride is an indirect bandgap semiconductor, G. Cassabois et al., Nat. Photon., 10, 262–266 (2016);DOI: 10.1038/NPHOTON.2015.277.
- Graphene, hexagonal boron nitride, and their heterostructures: properties and applications, J. Wang et al., RSC Adv., 7, 16801 (2017); DOI: 10.1039/c7ra00260b.
- Two dimensional hexagonal boron nitride (2D-h-BN): synthesis, properties and applications, K. Zhang et al., J. Mater. Chem. C, 5, 11992 (2017); DOI: 10.1039/c7tc04300g.
- Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing, J. Bao et al., Electron. Mater. Lett., 12, 1-16 (2016), DOI: 10.1007/s13391-015-5308-2.
- Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications, Q. Weng et al., Chem. Soc. Rev., 45, 3989-4012 (2016); DOI:10.1039/C5CS00869G.
- Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al., Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606 .
- Large-scale synthesis and functionalization of hexagonal boron nitride nanosheets, G. Bhimanapati et al., anoscale, 6, 11671-11675 (2014); DIO: 10.1039/C4NR01816H.
- Large Scale Thermal Exfoliation and Functionalization of Boron Nitride, Z. Cui et al., small, 10 (12), 2352–2355 (2014); DOI: 10.1002/smll.201303236.
- White Graphene undergoes Peroxidase Degradation, R. Kurapati et al., Angew.Chem., 128,5596 –5601 (2016); DOI:10.1002/anie.201601238.
- Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets, J. Wang et al., Nanoscale, 7, 1718-1724 (2015); DOI: 10.1039/C4NR04445B.
- Monolayer to Bulk Properties of Hexagonal Boron Nitride, D. Wickramaratne et al., J. Phys. Chem. C, 122 (44), 25524–25529 (2018); DOI: 10.1021/acs.jpcc.8b09087.
- Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al, Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606.
- Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride, K. Ba et al., Sci. Rep., 7, 45584 (2017); DOI: 10.1038/srep45584.
- Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains, Q. Wu et al., Sci. Rep., 5, 16159 (2015); DOI: 10.1038/srep16159,
- Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition, R. Chang et al., Chem. Mater. 2017, 29, 6252−6260 (2017); DOI: 10.1021/acs.chemmater.7b01285.
- Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
- High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
- Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
- Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
- Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
- Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
- Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN, W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
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要做细胞缺氧,需要买细胞缺氧盒,但不知道哪里有卖,各位大神有没有曾经做过的,能不能告诉我在哪能购买到,哪个公司有卖。。急。。。。。。实验小白。。。。在下先在此谢过了。
小弟现有一事儿想求助!
如下:1)凋亡的时候细胞色素c由线粒体里释放到胞浆里去的。那么如果能够测到此时在胞浆里的细胞色素c表达增多的话应该就能说明问题了
(2)可此时的问题是如果提胞浆蛋白时把线粒体也裂解了话细胞色素c也会被释放出来,还是会在胞浆里大量表达!就说不清楚是凋亡由线粒体释放的还是被人为的破坏了线粒体导致了的!!!
(3)故我的问题就是该怎么样去除这个人为的影响?怎么说明我测的胞浆里的细胞色素c就是凋亡时线粒体释放的?换句话讲就是如果能够在用细胞裂解液裂解胞浆蛋白时,将线粒体剔除掉?
是不是买个细胞色素c的测试盒就可以了啊?这个盒子有人用过吗,请指教一二!
盼复!非常感谢!
心肌肌钙蛋白I,英文为CardiactroponinI,该试剂盒在POCT领域内几乎是每个厂家都必做的项目,也是多数医院科室都开展的收费项目,市场容量很大,全国一年下来保守估计有3千万人份。但有些厂家销售的特别好,有些厂家销售的很一般。这一是由于销售渠道所致、二是因为产品质量差导致。试剂盒质量差一是因为厂家自身调试工艺不太好,二是由于所选择的抗体质量不好所致。现在市面上有心肌肌钙蛋白I抗体的厂家不多,大概也就不超过10家吧,主要为进口品牌,如:HyTest、BBI、Biospacific、Medix,国产品牌为深圳菲鹏,杭州启泰。其中着重要说的是杭州启泰,这是一家成立7年的抗原、抗体研发公司,公司不大,但立足于自主研发、创新,最近新推出的cTnI抗体可以说是目前国内外最好的抗体,这也算是填补了国内该领域的空白。从事了该行业将近10年,发此贴也是真切希望国内的生物试剂类公司,都专注于研发、创新,做一些好的试剂出来。因为很多事情国内做的并不比国外差的,国内的生物同行请加油吧!
以前先放-80再液氮,但是去-80冰箱有点远,我想能不能直接放液氮里面,我直接放过复苏成活率低了很多,有没有这种冻存盒可以直接放液氮的?

