Transition metal dichalcogenides (TMDCs), 2D Semiconductor Materials, NIR band-gap, Nano-electronics, Nano-photonics, Transistors, Photovoltaics, Material science
Product Details
Form
Powder
Preparation
Synthetic - chemical vapour transport (CVT)
Purity
≥ 99.995%
Structure
Hexagonal (2H)
Electronic properties
2D semiconductor
Melting point
650 °C
Appearance
Black metallic powder
General Description
Tin diselenide (SnSe2) is a family member of two-dimensional layered transition metal dichalcogenides semiconductors. Within each layer, every six selenium atoms are located at the corners of an octahedron, and feature an inversion symmetry (with respect to the central tin atom). The layered structure (bound by the weak Van der Waals forces) allows exfoliation in both solid and liquid forms to peel off layers from bulk crystals or powder.
Outperforming most other 2D layered materials (such as MoS2 and WSe2), atomic layered SnSe2 exhibits high photoresponsivity and a very fast rise and fall response speed. This shows that few-layer SnSe2 is a promising active 2D material for electronic and optoelectronic applications.
Tin diselenide (SnSe2) powder product image and single-layer structure.
Applications
With a layered structure, exfoliated thin-films from tin diselenide (SnSe2) powder offer new opportunities for practical applications as the electrode material for lithium-ion batteries, electric keys, field-effect transistors, photodetectors and supercapacitors.
Synthesis
Tin diselenide (SnSe2)powder is obtained via the CVT method,with a purity in excess of 99.995% achieved.
Usage
Tin diselenide (SnSe2)powder is suitable for liquid chemical exfoliation to prepare SnSe2 nanosheets and nanoparticles down to few-layer films. SnSe2 powder is also used for preparation of mono-layer and few-layer films via chemical vapour deposition (CVD).
Literature and Reviews
Layer-dependent properties of SnS2 and SnSe2 novel two-dimensional materials,J. Gonzalez et al., Phys. Rev. B 94, 125443 (2016); DOI: 10.1103/PhysRevB.94.125443.
SnSe2 quantum dot sensitized solar cells prepared employing molecular, metal chalcogenide as precursors, Chem. Commun., 48, 3324–3326 (2012); DOI: 10.1039/c2cc17081g.
Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors, X. Zhou et al., Adv. Mater., 27, 8035–8041 (2015); DOI: 10.1002/adma.201503873.
Designing the shape evolution of SnSe2 nanosheets and their optoelectronic properties, Y. Huang et al., Nanoscale, 7, 17375 (2015); DOI: 10.1039/c5nr05989e.
Field-effect transistors of high-mobility few-layer SnSe2, C. Guo et al, Appl. Phys. Lett., 109, 203104 (2016); doi: 10.1063/1.4967744.
Fast Photoresponse from 1T Tin Diselenide Atomic Layers, P. Yu et al., Adv. Funct. Mater., 26, 137–145 (2016); DOI: 10.1002/adfm.201503789.
To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.
