Pricing
| Size | Productcode | Sizedescription* | Quantity(EA) | Price |
| Small | M2145A10 | >10mm2 | 1 | £395.00 |
| Medium | M2145A25 | >25mm2 | 1 | £636.00 |
*typicalrepresentativesize,areas/dimensionsmayvary
GeneralInformation
| CASnumber | 12039-55-3 |
| Chemicalformula | TaSe2 |
| Molecularweight | 338.87g/mol |
| Bandgap | n/a |
| Synonyms | Tantalum(IV)selenide,Bis(selanylidene)tantalum |
| Classification/Family | Transitionmetaldichalcogenides(TMDCs),2D chargedensitywave(CDW) materials,Nano-electronics,Nano-photonics,Superconductivity,Photovoltaic,Materialsscience |
ProductDetails
| Form | SingleCrystal |
| Preparation | Synthetic -ChemicalVapourTransport(CVT) |
| Purity | ≥99.999% |
| Structure | Hexagonal(2H) |
| Electronicproperties | 2DCDWmaterials |
| Meltingpoint | >1,300 °C |
| Appearance | Darkbrown |
GeneralDescription
Tantalumdiselenide(TaSe2)isafamilymemberofGroupVBtransitionmetaldichalcogenides(TMDCs).GroupVBisoneofthe mostheavily-studiedgroupofTMDCsduetotheirdiversepermutationsofstablecompoundsandelectronicbehaviour.
2H-TaSe2isametal(orsemi-metal)withnobandgap.ThecrystalstructuresofTaSe2containTaintrigonalprismaticcoordinationwithinSe-Ta-Selayers.TheweakinterlayervanderWaals(vdW)bondingleadstovariousTaSe2 polytypes,whichdiffersimplyintherelativeorientationsofthelayersandtheirstackingarrangements.
1T-TaSe2,however,ismetallicinthebulkstructurebutinsulatinginasingle-layer.Ithasthickness-andtemperature-dependentpropertiesinthecommensuratechargedensitywave(CCDW)accompaniedbyaperiodiclatticedistortion(PLD).
Applications
Deviceswithnanometer-scalethicknessesstronglyexhibitnon-linearcurrent-voltagecharacteristics,unusualopticalresponse,andelectricalgatingatroomtemperature.Inprinciple,suchcurrent-voltagecharacteristicscanbeusedforimplementingrADIation-hard,all-metalliclogiccircuits.
Synthesis
Tantalumdiselenideismanufacturedusingchemicalvapourtransport(CVT)crystallisation,withcrystalshavingapurityinexcessof99.999%.
Usage
Tantalumdiselenidesinglecrystals canbeusedtopreparemonolayerandfew-layerTaSe2 bymechanicalorliquidexfoliation.
LiteratureandReviews
- All-metallicelectricallygated2H-TaSe2thin-filmswitchesandlogiccircuits, J.Renteriaetal.,J.Appl.Phys.,115,034305(2014);doi:10.1063/1.4862336.
- PhononandthermalpropertiesofexfoliatedTaSe2thinfilms,Z.Yanetal.,J.Appl.Phys.,114,204301(2013);10.1063/1.4833250.
- Observationofchargedensitywavesinfree-standing1T-TaSe2monolayersbytransmissionelectronmicroscopy,P.C.Börneretal.,Appl.Phys.Lett.113,173103(2018);doi:10.1063/1.5052722.
- PersistentCharge-Density-WaveOrderinSingle-LayerTaSe2,H.Ryuetal.,NanoLett.,18,689−694(2018);DOI:10.1021/acs.nanolett.7b03264.
- SelectiveFabricationofMott-InsulatingandMetallicMonolayerTaSe2,Y.Nakataetal.,ACSAppl.NanoMater.,1,1456−1460(2018);DOI:10.1021/acsanm.8b00184.
- FastandreliableidentificationofatomicallythinlayersofTaSe2crystals,A.Castellanos-Gomezetal.,NanoRes.,6(3):191–199(2013);DOI10.1007/s12274-013-0295-9.
- Brokenhexagonalsymmetryinthelocked-instateof2Ha-TaSe2andthediscommensuratemicrostructureofitsincommensurateCDWstates,J.Phys.C:SolidStatePhys.,14,5417-5432(1981),doi:10.1088/0022-3719/14/35/004.
- MechanicalExfoliationandCharacterizationofSingleandFew-LayerNanosheetsofWSe2,TaS2,andTaSe2,H.Lietal.,small,9,11,1974–1981(2013);DOI:10.1002/smll.201202919.
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,ossilaassumenoliABIlityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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