Pricing

General Information

Product Details

Substrate	SiO2/Si	PET
Product code	M2163F11	M2164F11
Size	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent
Purity	> 99%	> 99%
Transparency	> 97%	> 97%
Coverage	> 95%	> 95%
Number of Layers	2-5	2-5
Sheet Resistance	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 nm	250 µm
MSDS

* Other sizes available: 1 cm × 2 cm, 2 cm × 2 cm, or custom-made sizes, please contact us for more details.

General Description 

Hexagonal boron nitride (h-BN) few-layer film, often referred to as h-BN nanosheets (h-BNNS), has an ultra-flat surface without dangling bonds. Due to its oxidation resistance even at high temperatures (up to 1000 ^oC) and chemical resistance to both acids and bases, it is believed to be a better substrate than silicon.

High quality h-BN few-layer film is available on 2 different substrates: SiO₂/Si and PET (polyethylene terephthalate). Different sizes and substrates of few-layer h-BN films are also available on request.

• Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Sapphire (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Silicon (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Quartz (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Copper (5 cm × 10 cm or custom-made sizes)

Applications

Due to its special chemical properties and electronic structure, h-BN often acts as an atomic flat insulating substrate, or a tunneling dielectric barrier in graphene and other 2D electronics. Like graphene, h-BN exhibits excellent mechanical flexibility, chemical and temperature stability, and high thermal conductivity. h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Synthesis 

High quality few-layer h-BN films were first grown directly on copper foil via the chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates using wet chemical transfer process.

Usage

h-BN few-layer film can be used in various research purposes, such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. h-BN few-layer film can also be transferred to other substrates.

Literature and Reviews

1. Scalable Synthesis of Uniform Few-Layer Hexagonal Boron Nitride Dielectric Films, P Sutter et al., Nano Lett. 2013, 13, 276−281 (2013); DIO: 10.1021/nl304080y.
2. High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride, H, Liu et al., Nanoscale, 10, 5559–5565 (2018); DOI: 10.1039/c7nr09438h .
3. Pressure-Dependent Growth of Wafer-Scale Few-layer h‑BN by Metal−Organic Chemical Vapor Deposition, D. Kim et al., Cryst. Growth Des., 17, 2569−2575 (2017); DOI: 10.1021/acs.cgd.7b00107.
4. Catalyst-Free Bottom-Up Synthesis of Few-Layer Hexagonal Boron Nitride Nanosheets, J. Nanomater., 30429 (2015); doi: 10.1155/2015/304295.
5. Controlled Synthesis of Atomically Layered Hexagonal Boron Nitride via Chemical Vapor Deposition, J. Liu et al., Molecules, 21, 1636 (2016); doi:10.3390/molecules21121636.
6. Thickness determination of few-layer hexagonal boron nitride films by scanning electron microscopy and Auger electron spectroscopy, APL Mater. 2, 092502 (2014); doi.org/10.1063/1.4889815.
7. Vacuum-Ultraviolet Photodetection in Few-Layered h‑BN, W. Zheng et al., ACS Appl. Mater. Interfaces, 10, 27116−27123 (2018); DOI: 10.1021/acsami.8b07189.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.