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General Information

Product Details

Substrate	SiO2/Si	PET
Product code	M2161F11	M2162F11
Size	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent
Purity	> 99%	> 99%
Transparency	> 97%	> 97%
Coverage	> 95%	> 95%
Number of Layers	1	1
Sheet Resistance	n.a.	n.a.
Transfer method	Wet chemical transfer	Wet chemical transfer
Substrate Thickness	300 nm	250 µm
MSDS

* Other sizes available: 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes, please contact us for more details.

General Description 

Hexagonal boron nitride (h-BN) monolayer film has a similar lattice structure to graphene, with a lattice mismatch of only about 1.8%. h-BN and graphene are different in terms of their electrical conductivity. With a bandgap of 6.08 eV, h-BN has an insulating nature, whereas graphene is considered a semi-metal.

h-BN is widely used as a dielectric substrate in electronic and optical devices for graphene and other 2D-layered semiconductors (e.g. transition metal dichalcogenides (TMDs)).

High-quality h-BN monolayer film is available on 2 different substrates: SiO₂/Si PET (polyethylene terephthalate). Different sizes and substrates of monolayer h-BN films are also available via custom order.

• Glass (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Sapphire (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Silicon (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Quartz (1 cm × 1 cm, 1 cm × 2 cm, 2 cm × 2 cm or custom-made sizes)
• Copper (5 cm × 10 cm or custom-made sizes)

Applications

Due to its special chemical properties and electronic structure, h-BN often serves as an atomic flat insulating substrate or a tunneling dielectric barrier in graphene and other 2D electronics. Like graphene, h-BN exhibits excellent mechanical flexibility, chemical and temperature stability, and high thermal conductivity. h-BN has been used as a protective membrane in devices such as deep ultraviolet and quantum photonic emitters, where it provides strong oxidation resistance. It has also been utilised as a tunnelling barrier in field-effect tunnelling transistors.

Synthesis

High quality monolayer h-BN films were first grown directly on copper foil via the chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates via the wet chemical transfer process.

Usage

h-BN monolayer film is ready to use in various research purposes, such as microscopic analysis, photoluminescence, and Raman spectroscopy studies. h-BN monolayer film can also be transferred to other substrates.

Literature and Reviews

1. Monolayer to Bulk Properties of Hexagonal Boron Nitride, D. Wickramaratne et al., J. Phys. Chem. C, 122 (44), 25524–25529 (2018); DOI: 10.1021/acs.jpcc.8b09087.
2. Atomically Thin Boron Nitride: Unique Properties and Applications, L. Li et al, Adv. Funct. Mater., 26, 2594-2608 (2016); DOI: 10.1002/adfm.201504606.
3. Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride, K. Ba et al., Sci. Rep., 7, 45584 (2017); DOI: 10.1038/srep45584.
4. Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains, Q. Wu et al., Sci. Rep., 5, 16159 (2015); DOI: 10.1038/srep16159,
5. Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition, R. Chang et al.,  Chem. Mater. 2017, 29, 6252−6260 (2017); DOI: 10.1021/acs.chemmater.7b01285.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.