Few-layer molybdenum disulfide (MoS₂) is considered to be one of the most attractive materials for next-generation nanoelectronics. This is due to its silicon-level charge mobility and high current on/off ratio in thin-film transistors. Compared to monolayer  MoS_{2 (}which needs a deposition of an additional high-k dielectric layer such as HfO₂), few-layer MoS₂ can be operated on its own. This makes it more appealing for fabricating transistors and other optoelectronic devices.

General Information

Product Details

Substrate	SiO2/Si	Sapphire
Product code	M2167F11	M2168F11
Size	1 cm × 1 cm*	1 cm × 1 cm*
Growth Method	CVD synthesis	CVD synthesis
Appearance	Transparent	Transparent
Purity	> 99%	> 99%
Transparency	> 97%	> 97%
Coverage	> 95%	> 95%
Number of Layers	2-5	2-5
Sheet Resistance	n.a.	n.a.
Transfer method	Directly grown	Directly grown
Substrate Thickness	300 nm	250 µm
MSDS

* Other sizes available: 2 cm × 2 cm or 2 inches in diameter, 4 inches in diameter custom-made sizes, please contact us for more details.

High-quality molybdenum disulfide (MoS₂) few-layer films are available on 2 different substrates: SiO₂/Si and sapphire. Different sizes and substrates of few-layer MoS₂ films are also available via custom order. Please contact us for more details.

• Glass (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
• Silicon (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
• Quartz (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)
• Copper (1 cm × 1 cm, 2 cm × 2 cm, 2 inch in diameter, 4 inch in diameter or custom-made sizes)

Applications

Molybdenum disulfide (MoS₂) few-layer film, with an impressive direct band gap of 1.9 eV in the monolayer regime, has promising potential applications in nanoelectronics, optoelectronics, and flexible devices. MoS₂ few-layer films can also be made into heterostructures for energy conversation and storage devices, and used as a catalyst for hydrogen revolution reactions (HER).

Synthesis

High quality molybdenum disulfide (MoS₂) few-layer films were grown directly on the substrates (SiO₂/Si and Sapphire) by chemical vapour deposition (CVD) method. The films were later transferred to the desired substrates using wet chemical transfer process.

Usage

MoS₂ few-layer film can be used in research purposes such as microscopic analysis, photoluminescence and Raman spectroscopy studies. Few-layer MoS₂ film can also be transferred to other substrates.

Pricing

Literature and Reviews

1. Tunable Charge-Trap Memory Based on Few-Layer MoS2, E. Zhang et al., ACS Nano, 9 (1), 612–619 (2015); DIO: 10.1021/nn5059419.
2. Few-Layer MoS2: A Promising Layered Semiconductor, R. Ganatra et al., ACS Nano, 8 (5), 4074–4099 (2014); DOI: 10.1021/nn405938z.
3. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments, D. Tsai et al., ACS Nano, 7 (5), 3905–3911 (2013); DOI: 10.1021/nn305301b.
4. Optical Identification of Single- and Few-Layer MoS2 Sheets, H. Li et al., small, 8 (5), 682–686 (2012); DOI: 10.1002/smll.201101958.
5. Few-Layer MoS 2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells, A. Capasso et al., Adv. Energy Mater. 2016, 6, 1600920 (2016); DOI: 10.1002/aenm.201600920.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.