TheHighDensityOFETTestBoardcanprovidehighprecision,current-voltagemeasurementsofupto20OFETsonasinglesubstrate.Assuch,thistestboardcanspeedupyourresearchandhelpyoutoachievemorereliable,statisticalresults. ItiscompatIBLewithourHighDensityOFETFabricationSystemaswellaswithourPrefabricatedHighDensityOFETSubstrates.
Systemoverview
Untilnow,highdensityOFETshadtobetestedusingamechanicalneedleprobestationwhichwasadelicateandlaboriousprocess.Thesubstratebracket onthisboardfeatures20gold-plated,spring-loadedpogoconnectorstomakeareliableelectricalcontactwitheachdeviceonthesubstrate.Notonlydoesthismakethetestingprocesssimplerandfaster,italsoensuresuniformelectricalcontactwitheverysinglesubstratetested.
Thesubstratetobetestedissimplydroppedintothetestingholderandsecuredinplacewithaswivelpush-fitlid.Theopticalwindowthenprovidesaccessforphotosensitivity,photodopingandsensingmeasurementsifneeded.
OFETmeasurementsaremadeusingtwosourcemeasureunits(SMUs)connectedviaBNCconnectorcables:onetosetthegatevoltageandmeasureanygateleakagecurrent;thesecondtosetthesource-drainvoltageandmeasurethecurrent.
Theboardisalsoneatandcompactatjust200mm2 whichissmallenoughforeasyusewithinaglovebox.ThisproductiscoveredbyourFREE2-yearwarranty.
FeaturesandSpecifications
| SMUconnection | TwinBNCconnectors:channelB=source/drainconnection;channelA=gateconnection |
| OFETconnection | 20gold-plated,spring-loadedpogoconnectors |
| Source-Drainswitches | 20independentswitchestoChannelB;oneperdevice. |
| Gateswitches | 8independentswitchestoChannelA |
| Opticalwindow | Forexperimentalaccess:optoelectricalmeasurements;deviceIllumination(sensing/doping);microscopeinspection; |
| Dimensions | LxW=200mmx100mm |
Noisereductionandelectricalisolation
TheHighDensityOFETTestBoardhasbeendesignedtoreducenon-negligibleerrorwhichoftenoccursasaresultofstraycapacitance,electromagneticnoiseanddifficultyisolatingthetestcomponents(BNCcables,switches,board).Ourtestboardhasthefollowingfeaturestoenableprecisionlow-currentmeasurement:
- Doublegroundplane–toreduceelectromagneticpickupfromtheenvironment
- Intelligentwiretracks–designedtoreducenoise,leakagecurrentandstraycapacitance
- “Ideal”switchselection–proventoshowalmostnoextraresistancetocurrentflowwhenON,anddoesnotintroduceleakagescurrentwhenOFF
CompatibleProducts
TheHighDensityOFETTestBoardhasbeendesignedtobecompatiblewithourHighDensityOFETFabricationSystemandourPrefabricatedHighDensityOFETSubstrates.
PrefabricatedsubstratescanreduceOFETfabricationtime-simplydeposityoursemiconductorontop -makingthemidealforhighthroughputscreeningwherereliablestatisticsarerequired.TheHighDensityOFETsubstratesinparticularallowforstatisticaldatatobecollected,withreducedvariABIlitybetweenOFETsandreducedcostandprocessingtimeperOFETdevicewith20devicesonasinglesubstrate.SeealltheavailableHDOFETsubstratevariants.
IfyouprefertofabricateyourownOFETs,youcanuseourHighDensityOFETFabricationSystemwhichcontainsalltherelevantcomponentsneededincludingsubstrates,interchangeablemasks,lowersupportandlid.
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,ossilaassumenoliabilityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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