Like most of the transition metal dichalcogenides and graphite, molybdenum diselenide (MoSe₂) has a two-dimensional layered structure - with the individual layers stacked together by weak van der Waals interactions. Due to the larger size and better conductivity of selenium over sulphur, MoSe₂ is one of the best TMDCs of metallic nature. This also provides a great opportunity for hosting counterions in  electrochemical energy storage systems (such as lithium-ion and sodium-ion batteries).

Like MoS₂, MoSe₂ undergoes changes from indirect to direct band-gap transitions when bulk material (such as the bulk crystal) is reduced to monolayer film. However, unlike MoS₂, few-layer MoSe₂ flakes possess a nearly degenerate indirect and direct band-gap. An increase in temperature/pressure can effectively push the system toward the quasi-2D limit by reducing the coupling between the layers. MoS₂, on the other hand, has indirect and direct band-gaps that are well-separated in energy - and hence, far from degenerate.

Compared to MoS₂, MoSe₂ exhibits higher electrical conductivity.

General Information

Product Details

Chemical Structure

Applications

In contrast to graphene, exfoliated monolayer or few-layer 2D MoSe₂ has a direct band-gap. It has applications in transistors, photo-detectors, and photovoltaics. Due to its layered structure and the unique nature of selenium, MoSe₂ has been widely used in lubricants and energy storage devices.

Synthesis

Molybdenum diselenide MoSe₂ is manufactured via the process of chemical vapour transport (CVT) crystallisation, with purities of over 99.999% achieved.

Usage

Molybdenum diselenide MoSe₂ single crystals are a great source for obtaining monolayer and few-layer MoSe₂ via mechanical or liquid exfoliation. Single crystals can also be used directly in optical and scanning-probe microscopy (such as AFM and TEM studies).

Viscoelastic transfer using PDMS

Pricing

*typical representative size, areas/dimensions may vary

**item with a lead time of 2-3 weeks, please contact for more information

Literature and Reviews

1. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2, Y. Zhang et al., Nat. Nanotech., 9, 111–115 (2014); DOI: 10.1038/NNANO.2013.277.
2. Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates, X. Lu et al., Nano Lett., 14 (5), 2419–2425 (2014); DOI: 10.1021/nl5000906.
3. High-Mobility Transistors Based on Large-Area and Highly Crystalline CVD-Grown MoSe 2 Films on Insulating Substrates, J-S. Rhyee et al., Adv. Mater., 28, 2316–2321 (2016); DOI: 10.1002/adma.201504789.
4. Large-Area Single-Layer MoSe2 and Its van der Waals Heterostructures,  G. Shim et al., CS Nano, 8 (7), 6655–6662 92014);DOI: 10.1021/nn405685j.
5. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2, S. Tongay et al., Nano Lett., 12, 5576−5580 (2012); DOI: 10.1021/nl302584w.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.