Pricing
| Size | Productcode | Sizedescription* | Quantity(EA) | Price |
| Small | M2144A10 | >10mm2 | 1 | £396.00 |
| Medium | M2144A25 | >25mm2 | 1 | £637.00 |
*typicalrepresentativesize,areas/dimensionsmayvary
GeneralInformation
| CASnumber | 12143-72-5 |
| Chemicalformula | TaS2 |
| Molecularweight | 245.07g/mol |
| Bandgap | n/a |
| Synonyms | Dithioxotantalum,Tantalum(IV)sulfide,Bis(sulfanylidene)tantalum |
| Classification/Family | Transitionmetaldichalcogenides(TMDCs),2Dchargedensitywave(CDW)materials,Nano-electronics,Nano-photonics,Superconductivity,Photovoltaic,Materialsscience |
ProductDetails
| Form | SingleCrystal |
| Preparation | Synthetic -ChemicalVapourTransport(CVT) |
| Purity | ≥99.999% |
| Structure | Hexagonal(2H) |
| Electronicproperties | 2DCDWmaterials |
| Meltingpoint | >1,300 °C |
| Appearance | Darkbrown |
GeneralDescription
Tantalumdisulfide(TaS2)crystalshave stackedlayers, inwhichsheetsoftransitionmetalatomsliebetweenthechalcogenatomsheetsinan S-Ta-Ssequence.Ineachsheet,atomsarecloselypackedinahexagonalpattern.Thechemicalbondingwithinthelayeriscovalent,while individuallayersareboundbyvanderWaals(vdWs).ThismakesintercalationbetweenlayerspossIBLeandallowslayerstobepeeledoffbyexfoliation.
LayeredTaS2exhibitsauniquecombinationofvaluablestructural,mechanical,andelectronicphases.1Tand2Hphasesarethemostrepresentativestructures.ThedistinctionbetweentwophasescanbetheS-Ta-Scoordinatedsituations,whicharerecognisedasoctahedralcoordination(1T)andprismaticcoordination(2H).
Bulk2H-TaS2,exhibitsachargedensitywave(CDW)transitionat70Kandasuperconductivitytransitionat0.8K[1].
Applications
2H-TantalumdisulfidehasbeenusedfortheinvestigationoffundamentalphysicalphenomenasuchasCDWassociatedwiththedimensionalityeffect.Metallic2H-TaS2hasalsobeenproventobeanefficientelectrocatalystforthehydrogenevolutionreactions(HER),withaperformancethatiscomparabletoplatinum,owingtoitsabundantactivesitesconcentratedatedgesandbasal-planes,aswellastheself-optimisingmorphologicalchangeof2H-TaS2.
Synthesis
Tantalumdisulfideismanufacturedusingchemicalvapourtransport(CVT)crystallisation,withcrystalshavingapurityinexcessof99.999%.
Usage
Tantalumdisulfide singlecrystals canbeusedtopreparemono-andfew-layerTaS2 bymechanicalorliquidexfoliation.
LiteratureandReviews
- EnhancedsuperconductivityinatomicallythinTaS2, E.Navarro-Moratallaetal.,Nat.Commun.,7:11043(2016);DOI:10.1038/ncomms11043.
- Enhancedsuperconductivityuponweakeningofchargedensitywavetransportin2H-TaS2inthetwo-dimensionallimit,Y.Yangetal.,Phys.Rev.,98,035203(2018);DOI:10.1103/PhysRevB.98.035203.
- TowardExploringtheStructureofMonolayertoFew-layerTaS2byEfficientUltrasound-freeExfoliation,Y.Huetal.,NanoscaleRes.Lett.,13:20(2018);DOI10.1186/s11671-018-2439-z.
- Three-dimensionalresistivityandswitchingbetweencorrelatedelectronicstatesin1T-TaS2,D.Svetinetal.,7:46048(2017);DOI:10.1038/srep46048.
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,ossilaassumenoliABIlityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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