Pricing
| ProductCode | Quantity | Price |
| M2114C1 | 500mg | £168.00 |
| M2114C1 | 1g | £269.00 |
GeneralInformation
| CASnumber | 1315-01-1 |
| Chemicalformula | SnS2 |
| Molecularweight | 182.83g/mol |
| Bandgap | 2.2eV[1] |
| Synonyms | Tin(IV)Sulfide,StannicSulfide,TinSulfide(S2Sn),MosaicGold |
| Classification/Family | Transitionmetaldichalcogenides(TMDCs),2Dsemiconductormaterials,NIRband-gap,Nano-electronics,Nano-photonics,Transistors,Photovoltaics,MaterialsScience |
ProductDetails
| Form | Powder |
| Preparation | Synthetic -ChemicalVapourTransport(CVT) |
| Purity | ≥99.995% |
| Structure | Hexagonal(2H) |
| Electronicproperties | 2DSemiconductor |
| Meltingpoint | Decomposes |
| Colour | Gold,Yellow |
GeneralDescription
Tindisulfide(SnS2)isalayeredmetaldichalcogenidesemiconductorwithasimilarchemicalandcrystalstructuretothatofmolyBDenumdisulfide(MoS2).SnS2 isann-typesemiconductingmaterialthathasahexagonalCdI2-typestructure.Ineachindividuallayer,Sn issandwichedbetweentwoSlayerswithstrongcovalentbonding,whereasindividualmono-layersareheldbyweakvanderWaalsforces.Individuallayersbreakfreewhen weakvanderWaalsforcesareovercomebyeitherphysicalorchemicalexfoliation.
Tindisulfide(SnS2)powderproductimageandsingle-layerstructure.
Applications
Withaband-gapof 2.2–2.35eV,hexagonalSnS2hasbeenusedforefficientvisIBLe-lightwater-splitting.Itisearth-abundant,non-toxic,andchemicallystableinbothacidicorneutralaqueoussolutions. Liquid-exfoliatedSnS2 mono-orfew-layerultra-thinfilmshavealsobeenused inapplicationsrangingfrom photoelectronics,sensors,catalysts,andenergystoragedevices.
Synthesis
Tindisulfide(SnS2) powderisobtained viatheCVTmethod. Purityinexcessof99.995%hasbeenachieved.
Usage
Tindisulfide(SnS2) powderissuitableforliquidchemicalexfoliationto prepareSnS2 nanosheets andnanoparticlesdowntofew-layerfilms.SnS2powderisalsousedforpreparationofmono-layerandfew-layerfilmsbychemicalvapourdeposition(CVD).
LiteratureandReviews
- TinDisulfide—AnEmergingLayeredMetalDichalcogenideSemiconductor:MaterialsPropertiesandDeviceCharacteristics, Y,Huangetal.,ACSNano,8(10),10743–10755(2014);DOI:10.1021/nn504481r.
- FreestandingTinDisulfideSingle‐LayersRealizingEfficientVisible‐LightWaterSplitting,Y.Sunetal.,Angew.Chem.,124,8857–8861(2012);DOI:10.1002/ange.201204675.
- Two-DimensionalTinDisulfideNanosheetsforEnhancedSodiumStorage,W.Sunetal.,ACSNano,9(11),11371–11381(2015);DOI:10.1021/acsnano.5b05229.
- Low-FrequencyRamanSpectroscopyofFew-Layer2H-SnS2,T.Srivetal.,Sci.Rep.,810194(2018);DOI:10.1038/s41598-018-28569-6.
- ElectronicandopticalpropertiesofsinglecrystalSnS2:anearth-abundantdisulfidephotocatalyst, L.Burtonetal.,J.Mater.Chem.A,4,1312(2016);DOI:10.1039/c5ta08214e.
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,ossilaassumenoliABIlityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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