ossilaprovidesarangeofRegioregularpoly(3-hexylthiophene-2,5-diyl),commonlyknownasP3HT,withdifferentmolecularweightsandregioregularitiesforavarietyofresearchpurposes.ProducedbyMerckKGaAundertheLisicon®brandthishighqualityP3HTcollectionallowsawiderrangeofscienceandengineeringtobeundertakenthanbyusingasingleP3HT.
ThehighestregioregularityP3HT(M104,RR=96.3%)produceshighlycrystallinefilmsandisrecommendedforOFETs,nanofibrilformationandfastdryingOPVsatthethininterferencepeak(90nm).However,theexceptionallyhighregioregularityofthisP3HTmeansthatgellingandsurfaceroughnesscanbeanissueforslow-dryingthick-filmOPVs(>200nm).LowermolecularweightandregioregularityP3HTisrecommendedforinkjetandotherlargeareaorslowdryingdepositiontechniqueswheregelling/aggregationandsurfaceroughnessneedtobeavoided.
Afabricationreportwithmobilitymeasurementsof0.12cm2/VsforM104canbefoundbelow.
AlltheP3HTbelowishighlysoluble(50mg/ml)inchlorinatedsolventssuchaschloroform,chlorobenzene,dichlorobenzeneandtrichlorobenzene.TheintermediateandlowermolecularweightP3HTmaterialsarerecommendedforusewithnon-chlorinatedsolventssuchasxylene,tolueneandTHFduetotheirincreasedsolubility.
GeneralInformation
| Fullname | Poly(3-hexylthiophene-2,5-diyl) |
| Synonyms | P3HT |
| CASnumber | 104934-50-1 |
| Chemicalformula | (C4H2S)n |
| Molecularweight | SeeBatchDetailstableatbottomofthepageforinformation |
| HOMO/LUMO | HOMO=-5.2eV,LUMO=-3.2eV |
| Solubility | Chloroform,chlorobenzene |
| Classification/Family | Polythiophenes,Organicsemiconductingmaterials,Lowbandgappolymers,Polymerdonors,Organicphotovoltaics,Polymersolarcells,OLEDs,OFETs |
OFETFabricationRoutine
Fieldeffectmobilitiesinexcessof0.12cm2/VsarerecordedusingM104whentheactivelayerisdispensedonOTS-treatedsiliconoxidedielectricbystaticspincoatingfromanoptimizedhigh/lowboilingpointsolventmix.
HighholemobilityinconjunctionwithgoodsolubilityandpartialairstABIlitymakeregioregularP3HTareferencematerialofchoiceforbothfundamentalandappliedresearchinorganicelectronic,physicsandchemistry.Asoneofthemostwell-studiedorganicsemiconductor,P3HTisoftenacknowledgetobeoneofthebenchmarkagainstwhichanynewp-typeordonorconjugatemoleculeshouldbecomparedandevaluated.
Mobilityhaspreviouslybeenfoundtobepositivelycorrelatedwithincreasingregion-regularity,slowdryingtime(achievedusinghighboilingpointsolvent),loweringofthesurfaceenergy,andmolecularweightinexcessof50kD.Theseconditionsfavourp-pstackingparallelstotheOFETsubstrate,whichinturnresultsinimprovedchargetransportacrossthetransistorchannel[1-13].
| Substratesize | 20x15mm |
| Gateconductivity | 1-30O·cm(Borondoped) |
| Siliconoxidethickness | 300nm |
| Devicepersubstrates | Five,commongate |
| Channellength | 30µm |
| Channelwidth | 1000µm |
Theactivelayersolutionpreparation,spincoating,substrateannealingandmeasurementsareperformedinagloveboxunderanitrogenatmosphere(H2O<0.1PPM;O2<5/8PPM).
ForgenericdetailsonthefabricationofOPVdevices,pleaseseeourwrittenguideandvideodemonstration.
ActiveLayerPreparation
High-RegioregularandhighmolecularweightRR-P3HT(M104)(RR=96.3%,Mw=77,500,Mn=38,700)isdissolvedinamixofhighandlowboilingpointsolventinordertoexploitthebeneficialeffectoflongdryingtimeandincreasethewettabilityoflowenergysurface,respectively.
- 5mg/mlofM104dissolvedinanhydrousChloroform:Trichlorobenzene(99:1)mix;
- Vialisplacedonhotplate(70°C)withastirrerbarfor30minutes;
- Solutioncooleddownatroomtemperatureandthenfilteredwitha0.45µmPTFE(hydrophobic)filter;
- Solutionstoredovernightonahotplateat30°CtopreventexcessiveaggregationoftheP3HTmolecules.
SubstrateCleaning
- Substratesloadedontosubstraterack(tokeeptheminuprightposition);
- SonicatedinhotHellmanexIIIsolution(1%)forfiveminutes;
- Rinsedtwiceinhotwater;
- SonicatedinwarmIsopropylalcohol(70°C)forfiveminutes;
- RinsedtwiceincoldDIwater;
- SubstratesstoredinDIwater.
ThermalDepositionofElectrodesandContactPads
- DoneonEdwards306Thermalcoaterincleanroomcondition;
- Substratesareblowndryandloadedinalowdensityevaporationstackwithalowdensityshadowmasktopatternthedesiredfeatures;
- Secondarymaskisaddedtoselectivelyevaporatethegateanddrain/sourcepads;
- Vacuumchamberpumpeddowntoavacuumpressureof5x10-6mbar;
- Chromiumadhesionlayer:5nm,rate0.05nm/s;
- Aluminium:80nm,rate:0.4nm/s;
- Changedsecondarymasktodepositelectrodes(FETchannels);
- Vacuum:2-3x10-6mbar;
- Chromiumadhesionlayer:1nm,rate0.05nm/s;
- Gold:40nm;rate0.05nm/s.
PFBTTreatmentforAuElectrodes(Laminarflow)
- Oxygenplasmatreatment,30secondsat100W;
- Substratesimmersedin2.5mMol/lsolutionofPFBTinisopropylalcoholatroomtemperature;
- Substratesrinsedtwiceinpureisopropylalcohol;
- Substratesareblownwithnitrogengun.
OTSTreatmentforSiO2Dielectric(Laminarflow)
- AsolutionofOTS(25microlitres)incyclohexane(anhydrousgrade,1ml)preparedinglovebox;
- Substrates(pre-loadedonasubstraterack)loadedintotheannealingbeaker,whichisfilledwithapprox.50mlofcyclohexaneinafumehood;
- PreviouslypreparedOTSsolutionquicklyaddedtothecyclohexaneandmixedwithaPipettetip;
- Theglasslidisplacedhalfwayontothebeaker,whichiscarefullyfilledwithmorecyclohexaneuntilitisfullandthelidisfullyclosed;
- Thefinalsolution(60ml)containsOTSataconcentrationof1mMol/l;
- Substrateskeptfor20minutesintheOTSsolution;
- SubstratesremovedfromtheOTSsolution,quicklyrinsedtwiceincleancyclohexane,andthenareblowndrywithnitrogengun.
ContactAngleAssessment
Thewater-droptestonthetreatedsiliconisaquicktesttoqualitativelyassesstheeffectoftheOTSonthesiliconsubstratestoensurethatthefabricationhasfunctionedcorrectly.Youcangetagoodapproximationofthecontactangleusingyoureyeorasimpledigitalphoto.
Previousquantitativeassessmentshaveshownthatthisroutinewillproducecontactanglesbetween90and110°C(dependingonthelabtemperature,humidityandotherfactors).YoucanquantifythatcontactangleeasilyandaccuratelyusingtheOssilaContactAngleGoniometer.
P3HT(M104)spincoating(glovebox)
- 30µlofOrganicSemi-Conductor(OSC)solutiondeliveredonthemiddleofthesubstrateandthenspincoatedat1000rpmfor10sfollowedby60sat2000rpm;
- Cottonswabsoakedinchlorobenzenetothoroughlywipecleanthecontactpadsandtherestofthesubstrateswiththeexceptionoftheareaaroundthechannel;
- Highprecisioncottonswabtocleanbetweendevicestoavoidcross-talkingandreduceleakage;
- Substratesannealedat90°Cfor30minutes;
- Cooleddownfortenminutes;
- FivedevicespersubstratearecharacterisedusingOFETTestBoardforLow-DensityOFETsinaglovebox;
- Secondannealingat120°Cfor20minutes,slowcoolingdownatroomtemperatureandmeasurement;
- Annealingat150°Cfor20minutes,slowcoolingdownatroomtemperatureandmeasurement.
MSDS Documentation
P3HTMSDSsheet
BatchDetails
ThebelowP3HTisinstockforimmediatedispatch.
| Batch | RR | Mw | Mn | PDI | Priceper1gram | Notes |
M102 | 95.7% | 65,200 | 29,600 | 2.20 | £329 | Discontinued |
M103 | 94.2% | 54,200 | 23,600 | 2.30 | £329 | Discontinued |
M105 | 95.5% | 94,100 | 49,500 | 1.90 | £329 | Discontinued |
M106 | 94.7% | 34,100 | 19,500 | 1.75 | £329 | Discontinued |
M107 | 93.6% | 24,480 | 8,750 | 2.8 | £329 | InStock |
M108 | 94.2% | 36,010 | 13,340 | 2.7 | £329 | InStock |
M109 | 95.2% | 36,600 | 18,300 | 2.0 | £329 | InStock |
M1010 | 97.3% | 74,000 | 35,240 | 2.1 | £329 | InStock |
| M1011 | 97.6% | 60,150 | 28,650 | 2.1 | £329 | InStock |
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,Ossilaassumenoliabilityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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免疫组化多聚物法
immunohistochemistry
英[ɪmjʊnəʊhɪstəʊ'kemɪstrɪ]
美[ɪmjʊnoʊhɪstoʊ'kemɪstrɪ]
[词典]免疫组织化学;
[例句]Methods Transmission electron microscope and immunohistochemistry were used.
方法采用透射电镜和免疫组化法。
苏州高分子科学先进材料有限公司
polymer英[ˈpɒlɪmə(r)]美[ˈpɑ:lɪmə(r)]
n.多聚物; [高分子] 聚合物;
[例句]The nature of the polymer is currently a trade secret.
这一聚合物的性质目前是个商业机密。
[其他]复数：polymers
英 [ˈpɒlɪmə(r)]
美 [ˈpɑ:lɪmə(r)]
n.
多聚物; [高分子] 聚合物;
[例句]The nature of the polymer is currently a trade secret.
这一聚合物的性质目前是个商业机密。
[其他]
复数：polymers
高分子化合物又称高分子（聚合物），高分子是由分子量很大的长链分子所组成，高分子的分子量从几千到几十万甚至几百万。而每个分子链都是由共价键联合的成百上千的一种或多种小分子构造而成。高分子的分类有多种，按来源可分为天然高分子、天然高分子衍生物、合成高分子三大类；根据用途则可分为合成树脂和塑料、合成橡胶、合成纤维等；按热行为可分为热塑性和热固性聚合物；按主链结构可分为碳链、杂链、和元素有机三类；另外根据工业产量和价格还可分为通用高分子、中间高分子、工程塑料以及特种高分子等等。
