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General Information

Product Details

General Description

Tantalum diselenide (TaSe₂) is a family member of Group VB transition metal dichalcogenides (TMDCs). Group VB is one of the most heavily-studied group of TMDCs due to their diverse permutations of stable compounds and electronic behaviour.

2H-TaSe₂ is a metal (or semi-metal) with no band gap. The crystal structures of TaSe₂ contain Ta in trigonal prismatic coordination within Se-Ta-Se layers. The weak interlayer van der Waals (vdW) bonding leads to various TaSe₂ polytypes, which differ simply in the relative orientations of the layers and their stacking arrangements.

1T-TaSe₂, however, is metallic in the bulk structure but insulating in a single-layer. It has thickness- and temperature-dependent properties in the commensurate charge density wave (CCDW) accompanied by a periodic lattice distortion (PLD).

Applications

Devices with nanometer-scale thicknesses strongly exhibit non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. In principle, such current-voltage characteristics can be used for implementing radiation-hard, all-metallic logic circuits.

Synthesis 

Tantalum diselenide is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.

Usage

Tantalum diselenide single crystals can be used to prepare monolayer and few-layer TaSe₂ by mechanical or liquid exfoliation.

Literature and Reviews

1. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits, J. Renteria et al., J. Appl. Phys., 115, 034305 (2014); doi: 10.1063/1.4862336.
2. Phonon and thermal properties of exfoliated TaSe2 thin films, Z. Yan et al.,J. Appl. Phys., 114, 204301 (2013); 10.1063/1.4833250.
3. Observation of charge density waves in free-standing 1T-TaSe2 monolayers by transmission electron microscopy, P. C. Börner et al., Appl. Phys. Lett. 113, 173103 (2018); doi: 10.1063/1.5052722.
4. Persistent Charge-Density-Wave Order in Single-Layer TaSe2, H. Ryu et al., Nano Lett., 18, 689−694 (2018); DOI: 10.1021/acs.nanolett.7b03264.
5. Selective Fabrication of Mott-Insulating and Metallic Monolayer TaSe2, Y. Nakata et al., ACS Appl. Nano Mater., 1, 1456−1460 (2018); DOI: 10.1021/acsanm.8b00184.
6. Fast and reliable identification of atomically thin layers of TaSe2 crystals, A. Castellanos-Gomez et al., Nano Res., 6(3): 191–199 (2013); DOI 10.1007/s12274-013-0295-9.
7. Broken hexagonal symmetry in the locked-in state of 2Ha-TaSe2 and the discommensurate microstructure of its incommensurate CDW states, J. Phys. C: Solid State Phys., 14, 5417-5432 (1981), doi: 10.1088/0022-3719/14/35/004.
8. Mechanical Exfoliation and Characterization of Single and Few-Layer Nanosheets of WSe2 , TaS2 , and TaSe2, H. Li et al., small, 9, 11, 1974–1981 (2013); DOI: 10.1002/smll.201202919.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.