Duetohighdemand,the5micronconstantinterdigitatedchannellengthtestchips(S411)arecurrentlyoutofstock.Pleasecontactusformoredetailsontheexpectedreturndate.
ossila"snewrangeofrobustandreusableplatinumtestchipsaredesignedtosaveyoutimeandmoney.
TheOFETswerepatternedviaphotolithography,meaningverynarrowchannellengthsareacheivable.
Theplatinumissputteredontoatitaniumadhesionlayertoprovidean extremelyrobustcontactandchannelallowingittowithstandcleaningproceduressuchassolventsonication,plasmaetching,and swabbing.Thisallowsthetestchipstobereusedmultipletimesfortestingvariousmaterialssavingasignificantamountoftimeandmoney.
NOTE:Patterningusingphotolithographyleavesexposededgesofthetitaniumadhesionlayer.Theconsequenceofthisisthatchargeinjectionintothesemiconductinglayercanoccurfromtheadhesionlayerboundaryinsteadoftheplatinum.Thereforethesedevicesarerecommendforsingle-crystalorsingle-flakematerialsthatcansitontopoftheelectrodeandspantheelectrodegap.
Mobilityscreeningismadequickandsimplewithourprefabricatedhighdensitytestchips,bydepositingyoursemiconductordirectlyontothesurfaceyoucancreate upto20OFETsonasinglechip.Inadditionwhenusingour high-densityOFETtestboard youcantestanentirechipinaslittleas3minutesreducingtheoveralltimeofbothfabricationandmeasurement.
| Productcode | Channelgeometry | Channelwidth | Channellength | Electrodepairs | Quantity | Price |
| S403A1 | Linear | 1mm | 2-10μmVariable | 20 | 1 | £83 |
| S403A2 | Linear | 1mm | 4-10μmVariable | 16(minimum) | 1 | £50 |
| S411 | Interdigitated | 26.6mm | 5μm | 20 | 1 | £83 |
UserManual
Specifications
| Substrate/Gate | Silicon(p-doped) |
| Gatedielectric | 300nmthermallygrownsilicondioxide |
| Source-Drainelectrodes | Platinum(100nm)/Titaniumadhesionlayer(5nm) |
| Depostionmethod | Plasmasputtering |
| Patterningmethod | Photolithography |
Applications
OssilaHighDensitySubstratesfeatureupto20OFETswhichcanbenefityourresearchinanumberofways.Firstly,productioncostisreducedasaresultofahighervolumeofOFETspersubstratecomparedtothelowdensityequivalents.ThiscanhelptostretchyourbudgettoallowyoutoproduceandtestlargernumbersofOFETs.
Secondly,producingOFETsisafarfasterandlesslaboriousprocess.Fabricationtimeisreducedbyupto50%whenusingprefabricatedhighdensityOFETs,freeingupmoretimetotestthedevices.Asaresultofthis,greatervolumesofstatisticscanbeproducedwhichinturncanprovidemorerobustandreliableresearch.
FurThermore,OFETvariABIlityisreducedsincealargernumberofOFETsareproducedwitheachfabrication.AtOssilawehaveoptimisedthefabricationprocessinordertoproduceconsistentlyhighqualitysubstrates.Inthisrespect,usingourprefabricatedsubstratesratherthanfabricatingyourowncanhelpyoutogathermorereliabledatatobenefityourresearchproject.
Prefabricatedhighdensitysubstratesareidealformobilitytestingastheyenableswift,efficienttestingofhighvolumesofOFETs.TheOssilahigh-densityOFETtestboardhasbeendesignedforthispurpose.
RatherthanusingamechanicalprobestationtotestOFETs,whichisadelicateandtime-consumingprocess,thehighdensitytestboardallowstestingofmultipleOFETsatonetime;simplydropthesubstrateintothetestslot,securethepush-fitlidandconnecttheboardviaitsBNCconnectorstoanarrayoftestequipment.
Theboardhasbeenintelligentlydesignedtoreduceexternalnoise,leakagecurrentandstraycapacitanceinordertoprovidereliableandpreciselow-currenttesting.
Specifications
Wefabricateourplatinumtestchipsfromp-dopedsiliconsubstrates.Aninsulating300nmsiliconoxidegatedielectricisfirstgrownonbothsidesofthesilicon.Thesourceanddraincontactsconsistofa5nmtitaniumadhesionlayer below 100 nmofplatinum.Aplatinumgatecontactisalsodepositedalongoneedgeofeachsubstrate.
Itisessentialthatthereisanelectricalconnectionbetweenthegatecontactandthep-dopedsilicononthesubstratesides.Whenthesubstratesarediced,aweakelectricalconnectionisformed,howeverthiscanbeeasilyremovedwhencleaningthesubstrate.Werecommendapplyingsilver(conductive)paintalongandaroundthegatecontactedgesothatamorerobustconnectionismade withthesubstrateedge.
Forindividualdetailsanddimensiondrawingsofeachsubstratetypesee below.
Linearvariablechannellengthsubstrates(S403&S404)
| Geometry | Linear |
| Arrangement(S403) | 20electrodepairs,5channelwidths |
| Arrangement(S404) | 16electrodepairsminimum,4channelwidthsminimum* |
| Channelwidth | 1mm |
| Channellengths | 2(S403A1only),4,6,8,and10µm |
Interdigitated22.6mmx5µm constantchannellengthsubstrate(S411)
| Geometry | Interdigitated |
| Arrangement | 20identicalOFETs |
| Channelwidth | 22.6mm |
| Channellength | 5µm |
Tothebestofourknowledgethetechnicalinformationprovidedhereisaccurate.However,Ossilaassumenoliabilityfortheaccuracyofthisinformation.Thevaluesprovidedherearetypicalatthetimeofmanufactureandmayvaryovertimeandfrombatchtobatch.
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中唐临界风险，33岁，第一胎，然后羊水穿刺加CMA基因芯片检查，染色体核型正常，4维彩超正常，医生说发育速度偏慢，但还算正常范围，CMA结果异常，如照片
无创dna检测8号染色体缺失32.99mb，羊穿正常，基因芯片检测还是8号染色体杂合性缺失32.2mb，请教专家孩子能要吗？万分感谢
求助各位大神，点击Downloadfulltable无法下载，总是出现错误，已经排除网络的问题，不知道是否还有其他方法下载，上面有一个Datatable的表格，不知道是不是芯片平台文件？
1、一张芯片上可以同时分析成百上千的探针，这样的情况可以检测多少位点？
2、基因芯片技术通量会有多大？怎么计算？
做蛋白质和microRNA的关系，那么先找出差异的蛋白质还是找出差异的microRNA好呢？有没有做ITRAQ和MICRORNA芯片好的公司推荐，非常感谢！
从GEO和ARRAYEXPRESS下载了miRNA的表达数据矩阵，但是结果不太一样，大致两种：①数值从个位数到几万不等，而且没有小数点；②数值在10上下，有小数点。见图
请问怎么知道数据是否经过了log转换？有注释文件说明吗？还是直接判断①是没转换的，②是转换的？
请问，我通过基因芯片筛选差异基因，有上调的也有下调的，即FC有正值，亦有负值，那么负值怎么取log？谢谢
研究蛋白质芯片的意义
1。蛋白质是基因表达的最终产物,接近生命活动的物质层面；
2。探针蛋白特异性高、亲和力强,可简化样品前处理，甚至可直接利用生物材料(血样、尿样、细胞及组织等)进行检测；
3。适合高通量筛选与靶蛋白作用的化合物；
4。有助于了解药物或毒物与其效应相关蛋白质的相互作用。
蛋白质芯片的分类：
1.蛋白质检测芯片
2.蛋白质功能芯片
蛋白质芯片的制备：
1。固相载体及其处理
载体（滴定板、滤膜、凝胶、载玻片）
2。蛋白质的预处理
选择具有较高纯度和完好生物活性的蛋白进行溶解
3。点制微阵列
可使用点制基因微阵列的商品化点样仪或喷墨法等
4。膜为载体：芯片放入湿盒，37°C1h
载玻片为载体：化学修饰产生醛基固定蛋白
5。微阵列的封闭固定微阵列上的蛋白样点
主要封闭试剂：BSA或Gly
相关链接:
全部有关生物芯片的实验方法技术(protocol)
生物芯片相关仪器及芯片・芯片扫描仪・芯片点样仪・生物芯片・生物芯片系统・其它
生物芯片技术服务
核酸分析类试剂
AFLP分析|SNP基因分型|线粒体DNA基因分型|其它基因分型|DNA指纹试剂盒|DNA测序试剂|核酸电泳凝胶|核酸标准品|凝胶纯化试剂盒|核酸染色|转座工具|其它
