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General Information

Product Details

General Description

Rhenium diselenide (ReSe₂) belongs to the family of layered transition metal dichalcogenide (TMDC) semiconductors with layers bound by van der Waals forces. However, Unlike most of the TMDCs such as MoS₂ and WSe₂, (which crystallise in a 2H-hexagonal structure) ReSe₂ shows a distorted CdCl₂-type lattice structure. Each unit cell of ReSe₂ contains four unit layers, which includes two categories of rhenium (Re) atoms together with four categories of selenium (Se) atoms.

The Se atoms on top and at the bottom sandwich the Re atoms in the middle to form a monolayer lattice of ReSe₂. Adjacent Re atoms are bonded in a distorted zigzag four-atom parallelogram form. Calculations identified that such a distorted octahedral (1T') crystal structure with triclinic symmetry has lower energy than its hexagonal counterpart to promote stabilty.

The triclinic symmetry of the crystal lattice caused by the Re4 “diamond-shaped” parallelograms renders it optically bi-axial, giving the rise of an inherent anisotropic in-plane polarisation response. For this reason, ReSe₂ and its doped hybrid materials are promising candidates for optical logic gates and optical computation.

Applications

With a direct bandgap of ~ 1.1 eV, rhenium diselenide (ReSe₂) can be used for energy harvesting photovoltaic device and energy storage electrocatalytic devices such as hydrogen evolution reactions (HERs).

Due to its reduced lattice symmetry, it also has potential applications in electronics, optoelectronics and thermoelectrics such as photodetectors, lasers and transistors.

Synthesis

Rhenium diselenide is manufactured using chemical vapour transport (CVT) crystallisation, with crystals having a purity in excess of 99.999%.

Usage

Rhenium diselenide single crystals can be used to prepare monolayer and few-layer ReSe₂ by mechanical or liquid exfoliation. 

Literature and Reviews

1. Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets, A. Taube, Appl. Phys. Lett. 107, 013105 (2015); doi: 10.1063/1.4926508
2. Rhenium diselenide (ReSe2) infrared photodetector enhanced by (3aminopropyl)trimethoxysilane (APTMS) treatment, M. H. Alia et al., Org. Electron.,  53, 14–19 (2018); doi: 10.1016/j.orgel.2017.11.006.
3. Interlayer Interactions in Anisotropic Atomically-thin  Rhenium Diselenide, H. Zhao et al.,  Nano Res., 8(11): 3651–3661 (2015); DOI: 10.1007/s12274-015-0865-0.
4. Highly Anisotropic in-Plane Excitons in Atomically Thin and Bulklike 1T′‑ReSe2, A. Arora et al., Nano Lett., 17, 3202−3207 (2017); DOI:10.1021/acs.nanolett.7b00765.
5. Layer-dependent electrical and optoelectronic responses of ReSe2 nanosheet transistors, S. Yang et al., Nanoscale,6, 7226–7231 (2014); DOI: 10.1039/c4nr01741b.
6. Direct identification of monolayer rhenium diselenide by an individual diffraction pattern, Z. Fei et al., Nano Res.,  10(7): 2535–2544 (2017); DOI 10.1007/s12274-017-1639-7.
7. Application of chemical vapor-deposited monolayer ReSe2 in the electrocatalytic hydrogen evolution reaction, S. Jian et al., Nano Res., 11(4): 1787–1797 (2018); doi:10.1007/s12274-017-1796-8.
8. Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment, S-H.Jo et al., Adv. Mater., 28, 6711–6718 (2016); DOI: 10.1002/adma.201601248.

To the best of our knowledge the technical information provided here is accurate. However, Ossila assume no liability for the accuracy of this information. The values provided here are typical at the time of manufacture and may vary over time and from batch to batch.